#8904
Aeronaut
Participant

mchargue wrote: As I understand the current switch, it comprises 12 spark-gaps to decrease the current density through any single conductor, (switch) and already represents a problem with timing between the various switches. Increasing the number would further decrease current density through any one switch, but would likely increase the timing problem.

Unless & until a better mechanism is put in place to resolve timing issues between switches, I’m not sure that you’d want to increase the count of them.

As for lower voltage, I think the plan is to increase the voltage in order to increase the amperage, so lowed voltages probably could not be a goal.

My $.02

Pat

This reminds me of the old Darlington Transistor configuration, where a fast, sensitive transistor drives the brute force switching transistor. Dusted off and applied to thyristors, why not? After all, 5 inch wafer processing assembly lines should be a dime a dozen in this 8 inch silicon wafer world.

Darren Snider posted this on the FB page recently- http://www.divtecs.com/research/high-current-high-voltage-igbt-switch/ which looks to me like it might be properly scalable.