vansig wrote:
tightening up the interlayer spacing helps a lot, but reduces breakdown voltage. it’s doubtful that spacing could be less than .003mm; yielding 214 m³ volume. still kinda large.
it turns out that dielectric strength is easier to control on thin films than it is on thicker areas, (go figure?)
and i read some claims that thin films of silicon dioxide end up with a dielectric strength near 1000 kV/mm. These end up being used in chip fabrication. If true, this could enable shrinking the cells to a tolerable size, (eg: 25,000 layers, total thickness ~38 cm, 20m x 20m surface area, or a sphere 5.6 m radius).
