vansig wrote: probably not, unless we can force a situation where secondary electrons have exactly the right energy to be captured most-efficiently; eg: if the PV cell lases,
…which might be the case if, for a 215 nm band gap, for example, the semiconductor is, say, 215 nm thick, or forced to occupy a channel 215 nm wide.
perhaps something similar to this photonic crystal defect cavity : http://www.dtic.mil/cgi-bin/GetTRDoc?Location=U2&doc=GetTRDoc.pdf&AD=ADA471262
the above sounds really advanced, but it might be entirely feasible.
— http://www.osti.gov/bridge/servlets/purl/179272-kOZES2/webviewable/179272.pdf
